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Home > Products > Integrated Circuits (ICs) > Memory > BR25G512FJ-3GE2
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1919518BR25G512FJ-3GE2 ImageLAPIS Semiconductor

BR25G512FJ-3GE2

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Reference Price(In US Dollars)

In stock
2500+
$0.629
5000+
$0.589
12500+
$0.57
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Specifications
  • Part Number
    BR25G512FJ-3GE2
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    SPI BUS EEPROM
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.BR25G512FJ-3GE2.pdf
    2.BR25G512FJ-3GE2.pdf
  • Write Cycle Time - Word, Page
    5ms
  • Voltage - Supply
    1.8 V ~ 5.5 V
  • Technology
    EEPROM
  • Supplier Device Package
    8-SOP-J
  • Series
    -
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    BR25G512FJ-3GE2TR
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Memory Type
    Non-Volatile
  • Memory Size
    512Kb (64K x 8)
  • Memory Interface
    SPI
  • Memory Format
    EEPROM
  • Manufacturer Standard Lead Time
    9 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    EEPROM Memory IC 512Kb (64K x 8) SPI 10MHz 8-SOP-J
  • Clock Frequency
    10MHz

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