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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > BSM180D12P2C101
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4466958BSM180D12P2C101 ImageLAPIS Semiconductor

BSM180D12P2C101

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Reference Price(In US Dollars)

In stock
1+
$434.97
10+
$418.861
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Specifications
  • Part Number
    BSM180D12P2C101
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 1200V 180A MODULE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.BSM180D12P2C101.pdf
    2.BSM180D12P2C101.pdf
    3.BSM180D12P2C101.pdf
  • Vgs(th) (Max) @ Id
    4V @ 35.2mA
  • Supplier Device Package
    Module
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    -
  • Power - Max
    1130W
  • Packaging
    Bulk
  • Package / Case
    Module
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    32 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    23000pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    -
  • FET Type
    2 N-Channel (Half Bridge)
  • FET Feature
    Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss)
    1200V (1.2kV)
  • Detailed Description
    Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module
  • Current - Continuous Drain (Id) @ 25°C
    204A (Tc)

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