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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTA123JEBTL
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218205DTA123JEBTL ImageLAPIS Semiconductor

DTA123JEBTL

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Reference Price(In US Dollars)

In stock
3000+
$0.04
6000+
$0.035
15000+
$0.029
30000+
$0.028
75000+
$0.026
150000+
$0.023
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Specifications
  • Part Number
    DTA123JEBTL
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 150MW EMT3F
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.DTA123JEBTL.pdf
    2.DTA123JEBTL.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    EMT3F (SOT-416FL)
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-89, SOT-490
  • Other Names
    DTA123JEBTL-ND
    DTA123JEBTLTR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount EMT3F (SOT-416FL)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    DTA123

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