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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTB123YUT106
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1903076DTB123YUT106 ImageLAPIS Semiconductor

DTB123YUT106

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Reference Price(In US Dollars)

In stock
1+
$0.58
10+
$0.419
25+
$0.326
100+
$0.247
250+
$0.175
500+
$0.14
1000+
$0.107
Inquiry Online
Specifications
  • Part Number
    DTB123YUT106
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 200MW UMT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.DTB123YUT106.pdf
    2.DTB123YUT106.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    UMT3
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    200mW
  • Packaging
    Original-Reel®
  • Package / Case
    SC-70, SOT-323
  • Other Names
    DTB123YUT106DKR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount UMT3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    56 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    DTB123

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