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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTB143ESTP
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625799DTB143ESTP ImageLAPIS Semiconductor

DTB143ESTP

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Specifications
  • Part Number
    DTB143ESTP
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 300MW SPT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DTB143ESTP.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    SPT
  • Series
    -
  • Resistor - Emitter Base (R2)
    4.7 kOhms
  • Resistor - Base (R1)
    4.7 kOhms
  • Power - Max
    300mW
  • Packaging
    Tape & Box (TB)
  • Package / Case
    SC-72 Formed Leads
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    47 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    DTB143

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