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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC143EMFHAT2L
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6280820DTC143EMFHAT2L ImageLAPIS Semiconductor

DTC143EMFHAT2L

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Reference Price(In US Dollars)

In stock
1+
$0.27
10+
$0.243
25+
$0.175
100+
$0.136
250+
$0.086
500+
$0.073
1000+
$0.05
2500+
$0.045
Inquiry Online
Specifications
  • Part Number
    DTC143EMFHAT2L
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    NPN DIGITAL TRANSISTOR (CORRESPO
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.DTC143EMFHAT2L.pdf
    2.DTC143EMFHAT2L.pdf
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Transistor Type
    NPN - Pre-Biased + Diode
  • Supplier Device Package
    VMT3
  • Series
    Automotive, AEC-Q101
  • Resistor - Emitter Base (R2)
    4.7 kOhms
  • Resistor - Base (R1)
    4.7 kOhms
  • Power - Max
    150mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-723
  • Other Names
    DTC143EMFHAT2LCT
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 150mW Surface Mount VMT3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    100mA

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