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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD113ECHZGT116
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5998223DTD113ECHZGT116 ImageLAPIS Semiconductor

DTD113ECHZGT116

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Reference Price(In US Dollars)

In stock
3000+
$0.036
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Specifications
  • Part Number
    DTD113ECHZGT116
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    500MA/50V DIGITAL TRANSISTOR (WI
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.DTD113ECHZGT116.pdf
    2.DTD113ECHZGT116.pdf
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Transistor Type
    NPN - Pre-Biased + Diode
  • Supplier Device Package
    SST3
  • Series
    Automotive, AEC-Q101
  • Resistor - Emitter Base (R2)
    1 kOhms
  • Resistor - Base (R1)
    1 kOhms
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    DTD113ECHZGT116TR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 500mA 200MHz 200mW Surface Mount SST3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    33 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    500mA

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