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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD523YMT2L
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3818888DTD523YMT2L ImageLAPIS Semiconductor

DTD523YMT2L

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Reference Price(In US Dollars)

In stock
8000+
$0.105
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Specifications
  • Part Number
    DTD523YMT2L
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 150MW VMT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.DTD523YMT2L.pdf
    2.DTD523YMT2L.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 5mA, 100mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    VMT3
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-723
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    260MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 12V 500mA 260MHz 150mW Surface Mount VMT3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    140 @ 100mA, 2V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    DTD523

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