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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTD143ECT216
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5811884DTD143ECT216 ImageLAPIS Semiconductor

DTD143ECT216

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Reference Price(In US Dollars)

In stock
10000+
$0.075
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Specifications
  • Part Number
    DTD143ECT216
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 200MW SST3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DTD143ECT216.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    SST3
  • Series
    -
  • Resistor - Emitter Base (R2)
    4.7 kOhms
  • Resistor - Base (R1)
    4.7 kOhms
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    47 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    DTD143

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