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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMB11FHAT2R
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5066089EMB11FHAT2R ImageLAPIS Semiconductor

EMB11FHAT2R

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Reference Price(In US Dollars)

In stock
1+
$0.42
10+
$0.379
25+
$0.272
100+
$0.212
250+
$0.133
500+
$0.114
1000+
$0.077
2500+
$0.07
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Specifications
  • Part Number
    EMB11FHAT2R
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS 2PNP 100MA EMT6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.EMB11FHAT2R.pdf
    2.EMB11FHAT2R.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    -
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Transistor Type
    2 PNP Pre-Biased (Dual)
  • Supplier Device Package
    EMT6
  • Series
    Automotive, AEC-Q101
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    150mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    EMB11FHAT2RCT
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    100mA

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