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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMG8T2R
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467809EMG8T2R ImageLAPIS Semiconductor

EMG8T2R

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Reference Price(In US Dollars)

In stock
1+
$0.59
10+
$0.413
25+
$0.339
100+
$0.271
250+
$0.197
500+
$0.16
1000+
$0.123
2500+
$0.111
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Specifications
  • Part Number
    EMG8T2R
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN PREBIAS 0.15W EMT5
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.EMG8T2R.pdf
    2.EMG8T2R.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Supplier Device Package
    EMT5
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    4.7 kOhms
  • Power - Max
    150mW
  • Packaging
    Original-Reel®
  • Package / Case
    6-SMD (5 Leads), Flat Lead
  • Other Names
    EMG8T2RDKR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    *MG8

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