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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > EMT51T2R
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5255977EMT51T2R ImageLAPIS Semiconductor

EMT51T2R

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Reference Price(In US Dollars)

In stock
8000+
$0.067
16000+
$0.06
24000+
$0.056
56000+
$0.05
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Specifications
  • Part Number
    EMT51T2R
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS 2PNP 20V 0.2A 6EMT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.EMT51T2R.pdf
    2.EMT51T2R.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    20V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 10mA, 100mA
  • Transistor Type
    2 PNP (Dual)
  • Supplier Device Package
    EMT6
  • Series
    -
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    EMT51T2RTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    350MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 PNP (Dual) 20V 200mA 350MHz 150mW Surface Mount EMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA, 6V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    200mA

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