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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > IMB10AT110
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3519238IMB10AT110 ImageLAPIS Semiconductor

IMB10AT110

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Reference Price(In US Dollars)

In stock
3000+
$0.107
6000+
$0.101
15000+
$0.092
30000+
$0.086
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Specifications
  • Part Number
    IMB10AT110
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS DUAL PNP SMT6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.IMB10AT110.pdf
    2.IMB10AT110.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Transistor Type
    2 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    SMT6
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    300mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-74, SOT-457
  • Other Names
    IMB10AT110TR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    MB10

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