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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > QSZ3TR
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6755910QSZ3TR ImageLAPIS Semiconductor

QSZ3TR

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Specifications
  • Part Number
    QSZ3TR
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 12V 3A 5TSMT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    QSZ3TR.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 30mA, 1.5A
  • Transistor Type
    NPN, PNP (Emitter Coupled)
  • Supplier Device Package
    TSMT5
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-5 Thin, TSOT-23-5
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    280MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 12V 3A 280MHz 500mW Surface Mount TSMT5
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    270 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    3A

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