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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > QSZ4TR
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568201QSZ4TR ImageLAPIS Semiconductor

QSZ4TR

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Reference Price(In US Dollars)

In stock
1+
$0.78
10+
$0.659
25+
$0.576
100+
$0.494
250+
$0.428
500+
$0.362
1000+
$0.28
Inquiry Online
Specifications
  • Part Number
    QSZ4TR
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 30V 2A 5TSMT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.QSZ4TR.pdf
    2.QSZ4TR.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Vce Saturation (Max) @ Ib, Ic
    370mV @ 75mA, 1.5A
  • Transistor Type
    NPN, PNP (Emitter Coupled)
  • Supplier Device Package
    TSMT5
  • Series
    -
  • Power - Max
    1.25W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-23-5 Thin, TSOT-23-5
  • Other Names
    QSZ4CT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    280MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 30V 2A 280MHz 1.25W Surface Mount TSMT5
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    270 @ 200mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    2A
  • Base Part Number
    QSZ

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