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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > R6011KNJTL
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3173586R6011KNJTL ImageLAPIS Semiconductor

R6011KNJTL

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Reference Price(In US Dollars)

In stock
1000+
$1.101
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Specifications
  • Part Number
    R6011KNJTL
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CHANNEL 600V 11A TO263
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.R6011KNJTL.pdf
    2.R6011KNJTL.pdf
  • Vgs(th) (Max) @ Id
    5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-263
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    390 mOhm @ 3.8A, 10V
  • Power Dissipation (Max)
    124W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    R6011KNJTLTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    17 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    740pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    Schottky Diode (Isolated)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-263
  • Current - Continuous Drain (Id) @ 25°C
    11A (Tc)

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