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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > R6076ENZ1C9
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3502553R6076ENZ1C9 ImageLAPIS Semiconductor

R6076ENZ1C9

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Reference Price(In US Dollars)

In stock
1+
$11.76
10+
$10.583
100+
$8.702
500+
$7.29
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Specifications
  • Part Number
    R6076ENZ1C9
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 76A TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    R6076ENZ1C9.pdf
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-247
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    42 mOhm @ 44.4A, 10V
  • Power Dissipation (Max)
    120W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    17 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    6500pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    260nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 76A (Tc) 120W (Tc) Through Hole TO-247
  • Current - Continuous Drain (Id) @ 25°C
    76A (Tc)

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