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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RAL025P01TCR
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131127RAL025P01TCR ImageLAPIS Semiconductor

RAL025P01TCR

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Reference Price(In US Dollars)

In stock
1+
$0.63
10+
$0.444
100+
$0.292
500+
$0.172
1000+
$0.133
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Specifications
  • Part Number
    RAL025P01TCR
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 12V 2.5A TUMT6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RAL025P01TCR.pdf
    2.RAL025P01TCR.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Vgs (Max)
    -8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TUMT6
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    62 mOhm @ 2.5A, 4.5V
  • Power Dissipation (Max)
    320mW (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    6-SMD, Flat Leads
  • Other Names
    RAL025P01TCRCT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2000pF @ 6V
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    P-Channel 12V 2.5A (Ta) 320mW (Ta) Surface Mount TUMT6
  • Current - Continuous Drain (Id) @ 25°C
    2.5A (Ta)

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