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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RCD100N19TL
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5887240RCD100N19TL ImageLAPIS Semiconductor

RCD100N19TL

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Reference Price(In US Dollars)

In stock
2500+
$0.531
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Specifications
  • Part Number
    RCD100N19TL
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 190V 10A CPT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RCD100N19TL.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    CPT3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    182 mOhm @ 5A, 10V
  • Power Dissipation (Max)
    850mW (Ta), 20W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    RCD100N19TLTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2000pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    52nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4V, 10V
  • Drain to Source Voltage (Vdss)
    190V
  • Detailed Description
    N-Channel 190V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
  • Current - Continuous Drain (Id) @ 25°C
    10A (Tc)

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