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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RGTH40TS65DGC11
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5548868RGTH40TS65DGC11 ImageLAPIS Semiconductor

RGTH40TS65DGC11

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Reference Price(In US Dollars)

In stock
1+
$2.90
10+
$2.617
25+
$2.336
100+
$2.103
250+
$1.869
500+
$1.635
1000+
$1.355
2500+
$1.262
Inquiry Online
Specifications
  • Part Number
    RGTH40TS65DGC11
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    IGBT 650V 40A 144W TO-247N
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RGTH40TS65DGC11.pdf
    2.RGTH40TS65DGC11.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 20A
  • Test Condition
    400V, 20A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    22ns/73ns
  • Switching Energy
    -
  • Supplier Device Package
    TO-247N
  • Series
    -
  • Reverse Recovery Time (trr)
    58ns
  • Power - Max
    144W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    40nC
  • Detailed Description
    IGBT Trench Field Stop 650V 40A 144W Through Hole TO-247N
  • Current - Collector Pulsed (Icm)
    80A
  • Current - Collector (Ic) (Max)
    40A

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