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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RGTH50TS65GC11
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5566022RGTH50TS65GC11 ImageLAPIS Semiconductor

RGTH50TS65GC11

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Reference Price(In US Dollars)

In stock
1+
$3.18
10+
$2.835
25+
$2.552
100+
$2.325
250+
$2.098
500+
$1.882
1000+
$1.588
2500+
$1.512
Inquiry Online
Specifications
  • Part Number
    RGTH50TS65GC11
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    IGBT 650V 50A 174W TO-247N
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RGTH50TS65GC11.pdf
    2.RGTH50TS65GC11.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 25A
  • Test Condition
    400V, 25A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    27ns/94ns
  • Switching Energy
    -
  • Supplier Device Package
    TO-247N
  • Series
    -
  • Power - Max
    174W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    49nC
  • Detailed Description
    IGBT Trench Field Stop 650V 50A 174W Through Hole TO-247N
  • Current - Collector Pulsed (Icm)
    100A
  • Current - Collector (Ic) (Max)
    50A

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