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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RGW60TS65DGC11
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5511368RGW60TS65DGC11 ImageLAPIS Semiconductor

RGW60TS65DGC11

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Reference Price(In US Dollars)

In stock
1+
$5.29
10+
$4.725
25+
$4.252
100+
$3.875
250+
$3.497
500+
$3.137
1000+
$2.646
Inquiry Online
Specifications
  • Part Number
    RGW60TS65DGC11
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    650V 30A FIELD STOP TRENCH IGBT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RGW60TS65DGC11.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 30A
  • Test Condition
    400V, 30A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    37ns/114ns
  • Switching Energy
    480µJ (on), 490µJ (off)
  • Supplier Device Package
    TO-247N
  • Series
    -
  • Reverse Recovery Time (trr)
    92ns
  • Power - Max
    178W
  • Package / Case
    TO-247-3
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    84nC
  • Detailed Description
    IGBT Trench Field Stop 650V 60A 178W Through Hole TO-247N
  • Current - Collector Pulsed (Icm)
    120A
  • Current - Collector (Ic) (Max)
    60A

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