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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RGW80TS65DGC11
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6832379RGW80TS65DGC11 ImageLAPIS Semiconductor

RGW80TS65DGC11

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Reference Price(In US Dollars)

In stock
1+
$5.70
10+
$5.093
25+
$4.583
100+
$4.176
250+
$3.768
500+
$3.381
1000+
$2.852
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Specifications
  • Part Number
    RGW80TS65DGC11
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    650V 40A FIELD STOP TRENCH IGBT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RGW80TS65DGC11.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 40A
  • Test Condition
    400V, 40A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    44ns/143ns
  • Switching Energy
    760µJ (on), 720µJ (off)
  • Supplier Device Package
    TO-247N
  • Series
    -
  • Reverse Recovery Time (trr)
    92ns
  • Power - Max
    214W
  • Package / Case
    TO-247-3
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    110nC
  • Detailed Description
    IGBT Trench Field Stop 650V 78A 214W Through Hole TO-247N
  • Current - Collector Pulsed (Icm)
    160A
  • Current - Collector (Ic) (Max)
    78A

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