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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RJU002N06T106
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1239707RJU002N06T106 ImageLAPIS Semiconductor

RJU002N06T106

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Reference Price(In US Dollars)

In stock
1+
$0.54
10+
$0.379
100+
$0.249
500+
$0.147
1000+
$0.113
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Specifications
  • Part Number
    RJU002N06T106
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 200MA SOT-323
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RJU002N06T106.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 1mA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    UMT3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    2.3 Ohm @ 200mA, 4.5V
  • Power Dissipation (Max)
    200mW (Ta)
  • Packaging
    Original-Reel®
  • Package / Case
    SC-70, SOT-323
  • Other Names
    RJU002N06T106DKR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    18pF @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3
  • Current - Continuous Drain (Id) @ 25°C
    200mA (Ta)

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