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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RQ6C050UNTR
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2297446RQ6C050UNTR ImageLAPIS Semiconductor

RQ6C050UNTR

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Reference Price(In US Dollars)

In stock
1+
$0.55
10+
$0.464
100+
$0.348
500+
$0.255
1000+
$0.197
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Specifications
  • Part Number
    RQ6C050UNTR
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 20V 5A TSMT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RQ6C050UNTR.pdf
    2.RQ6C050UNTR.pdf
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Vgs (Max)
    ±10V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TSMT6 (SC-95)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    30 mOhm @ 5A, 4.5V
  • Power Dissipation (Max)
    1.25W (Ta)
  • Packaging
    Original-Reel®
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    RQ6C050UNDKR
    RQ6C050UNTRDKR
    RQ6C050UNTRDKR-ND
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    900pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    N-Channel 20V 5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)
  • Current - Continuous Drain (Id) @ 25°C
    5A (Ta)

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