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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RQ7E055ATTCR
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1721200RQ7E055ATTCR ImageLAPIS Semiconductor

RQ7E055ATTCR

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Reference Price(In US Dollars)

In stock
1+
$1.12
10+
$0.995
100+
$0.786
500+
$0.61
1000+
$0.482
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Specifications
  • Part Number
    RQ7E055ATTCR
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    PCH -30V -5.5A MIDDLE POWER MOSF
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RQ7E055ATTCR.pdf
    2.RQ7E055ATTCR.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TSMT8
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    24.5 mOhm @ 5.5A, 10V
  • Power Dissipation (Max)
    1.5W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    8-SMD, Flat Lead
  • Other Names
    RQ7E055ATTCRDKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    860pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    18.8nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    P-Channel 30V 5.5A (Tc) 1.5W (Tc) Surface Mount TSMT8
  • Current - Continuous Drain (Id) @ 25°C
    5.5A (Tc)

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