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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RT1E050RPTR
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3895806RT1E050RPTR ImageLAPIS Semiconductor

RT1E050RPTR

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Reference Price(In US Dollars)

In stock
1+
$0.66
10+
$0.518
100+
$0.355
500+
$0.244
1000+
$0.183
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Specifications
  • Part Number
    RT1E050RPTR
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 30V 5A TSST8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RT1E050RPTR.pdf
    2.RT1E050RPTR.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-TSST
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    36 mOhm @ 5A, 10V
  • Power Dissipation (Max)
    1.25W (Ta)
  • Packaging
    Original-Reel®
  • Package / Case
    8-SMD, Flat Lead
  • Other Names
    RT1E050RPDKR
    RT1E050RPTRDKR
    RT1E050RPTRDKR-ND
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    P-Channel 30V 5A (Ta) 1.25W (Ta) Surface Mount 8-TSST
  • Current - Continuous Drain (Id) @ 25°C
    5A (Ta)

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