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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RW1A030APT2CR
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3425598RW1A030APT2CR ImageLAPIS Semiconductor

RW1A030APT2CR

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Reference Price(In US Dollars)

In stock
8000+
$0.128
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Specifications
  • Part Number
    RW1A030APT2CR
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 12V 3A WEMT6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RW1A030APT2CR.pdf
    2.RW1A030APT2CR.pdf
    3.RW1A030APT2CR.pdf
    4.RW1A030APT2CR.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Vgs (Max)
    -8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    6-WEMT
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    42 mOhm @ 3A, 4.5V
  • Power Dissipation (Max)
    700mW (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    RW1A030APT2CR-ND
    RW1A030APT2CRTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2700pF @ 6V
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    P-Channel 12V 3A (Ta) 700mW (Ta) Surface Mount 6-WEMT
  • Current - Continuous Drain (Id) @ 25°C
    3A (Ta)

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