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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SCT2H12NYTB
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588833SCT2H12NYTB ImageLAPIS Semiconductor

SCT2H12NYTB

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Reference Price(In US Dollars)

In stock
1+
$6.60
10+
$5.893
25+
$5.304
100+
$4.832
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Specifications
  • Part Number
    SCT2H12NYTB
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    1700V 1.2 OHM 4A SIC FET
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.SCT2H12NYTB.pdf
    2.SCT2H12NYTB.pdf
  • Vgs(th) (Max) @ Id
    4V @ 410µA
  • Vgs (Max)
    +22V, -6V
  • Technology
    SiCFET (Silicon Carbide)
  • Supplier Device Package
    TO-268
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    1.5 Ohm @ 1.1A, 18V
  • Power Dissipation (Max)
    44W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Other Names
    SCT2H12NYTBCT
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    184pF @ 800V
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 18V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Drain to Source Voltage (Vdss)
    1700V
  • Detailed Description
    N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268
  • Current - Continuous Drain (Id) @ 25°C
    4A (Tc)

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