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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > SST2907AHZGT116
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5069347SST2907AHZGT116 ImageLAPIS Semiconductor

SST2907AHZGT116

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Reference Price(In US Dollars)

In stock
3000+
$0.032
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Specifications
  • Part Number
    SST2907AHZGT116
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    PNP MEDIUM POWER TRANSISTOR (SWI
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.SST2907AHZGT116.pdf
    2.SST2907AHZGT116.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Transistor Type
    PNP
  • Supplier Device Package
    SST3
  • Series
    Automotive, AEC-Q101
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    SST2907AHZGT116TR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 200mW Surface Mount SST3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA, 10V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    600mA

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