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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > UMB2NFHATN
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4186787

UMB2NFHATN

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Reference Price(In US Dollars)

In stock
3000+
$0.063
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Specifications
  • Part Number
    UMB2NFHATN
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    PNP+PNP DIGITAL TRANSISTOR (CORR
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.UMB2NFHATN.pdf
    2.UMB2NFHATN.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    -
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Transistor Type
    2 PNP Pre-Biased (Dual)
  • Supplier Device Package
    UMT6
  • Series
    Automotive, AEC-Q101
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    UMB2NFHATNTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 PNP Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount UMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    68 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    100mA

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