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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > UMH1NTN
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1687689

UMH1NTN

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Reference Price(In US Dollars)

In stock
3000+
$0.085
6000+
$0.08
15000+
$0.073
30000+
$0.069
75000+
$0.063
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Specifications
  • Part Number
    UMH1NTN
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN PREBIAS 0.15W UMT6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.UMH1NTN.pdf
    2.UMH1NTN.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Supplier Device Package
    UMT6
  • Series
    -
  • Resistor - Emitter Base (R2)
    22 kOhms
  • Resistor - Base (R1)
    22 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    UMH1NTN-ND
    UMH1NTNTR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    56 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    *MH1

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