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Home > Products > Integrated Circuits (ICs) > Memory > MT29F512G08CEHBBJ4-3R:B TR
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MT29F512G08CEHBBJ4-3R:B TR

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Reference Price(In US Dollars)

In stock
1000+
$53.323
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Specifications
  • Part Number
    MT29F512G08CEHBBJ4-3R:B TR
  • Manufacturer/Brand
    Micron Technology
  • Stock Quantity
    In stock
  • Description
    IC FLASH 512G PARALLEL 333MHZ
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Write Cycle Time - Word, Page
    -
  • Voltage - Supply
    2.5 V ~ 3.6 V
  • Technology
    FLASH - NAND
  • Series
    -
  • Packaging
    Tape & Reel (TR)
  • Other Names
    MT29F512G08CEHBBJ4-3R:B TR-ND
    MT29F512G08CEHBBJ4-3R:BTR
  • Operating Temperature
    0°C ~ 70°C (TA)
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Memory Type
    Non-Volatile
  • Memory Size
    512Gb (64G x 8)
  • Memory Interface
    Parallel
  • Memory Format
    FLASH
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    FLASH - NAND Memory IC 512Gb (64G x 8) Parallel 333MHz
  • Clock Frequency
    333MHz

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