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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N2219AE4
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2N2219AE4

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Reference Price(In US Dollars)

In stock
100+
$9.728
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Specifications
  • Part Number
    2N2219AE4
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 40V 0.8A TO-39
  • Lead Free Status / RoHS Status
  • Datasheets
    2N2219AE4.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-39 (TO-205AD)
  • Series
    -
  • Power - Max
    800mW
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Operating Temperature
    -55°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Manufacturer Standard Lead Time
    8 Weeks
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 50V 800mA 800mW Through Hole TO-39 (TO-205AD)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA, 10V
  • Current - Collector Cutoff (Max)
    10nA
  • Current - Collector (Ic) (Max)
    800mA

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