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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N2222AE3
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2N2222AE3

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Specifications
  • Part Number
    2N2222AE3
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    SMALL-SIGNAL BJT
  • Lead Free Status / RoHS Status
    RoHS Compliant
  • Datasheets
    2N2222AE3.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-18
  • Series
    -
  • RoHS Status
    RoHS Compliant
  • Power - Max
    500mW
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA, 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Current - Collector (Ic) (Max)
    800mA

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