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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > APT200GN60B2G
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5245175APT200GN60B2G ImageMicrosemi

APT200GN60B2G

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Reference Price(In US Dollars)

In stock
1+
$23.88
10+
$22.092
30+
$20.301
120+
$18.868
270+
$17.315
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Specifications
  • Part Number
    APT200GN60B2G
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 283A 682W TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.APT200GN60B2G.pdf
    2.APT200GN60B2G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    1.85V @ 15V, 200A
  • Test Condition
    400V, 200A, 1 Ohm, 15V
  • Td (on/off) @ 25°C
    50ns/560ns
  • Switching Energy
    13mJ (on), 11mJ (off)
  • Series
    -
  • Power - Max
    682W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    APT200GN60B2GMI
    APT200GN60B2GMI-ND
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    18 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    1180nC
  • Detailed Description
    IGBT Trench Field Stop 600V 283A 682W Through Hole
  • Current - Collector Pulsed (Icm)
    600A
  • Current - Collector (Ic) (Max)
    283A

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