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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > APT25GP120BDQ1G
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5595848APT25GP120BDQ1G ImageMicrosemi

APT25GP120BDQ1G

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Reference Price(In US Dollars)

In stock
1+
$13.69
10+
$12.445
30+
$11.512
120+
$10.578
270+
$9.645
510+
$9.023
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Specifications
  • Part Number
    APT25GP120BDQ1G
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1200V 69A 417W TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.APT25GP120BDQ1G.pdf
    2.APT25GP120BDQ1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    3.9V @ 15V, 25A
  • Test Condition
    600V, 25A, 5 Ohm, 15V
  • Td (on/off) @ 25°C
    12ns/70ns
  • Switching Energy
    500µJ (on), 440µJ (off)
  • Supplier Device Package
    TO-247 [B]
  • Series
    POWER MOS 7®
  • Power - Max
    417W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    APT25GP120BDQ1GMI
    APT25GP120BDQ1GMI-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    32 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    PT
  • Gate Charge
    110nC
  • Detailed Description
    IGBT PT 1200V 69A 417W Through Hole TO-247 [B]
  • Current - Collector Pulsed (Icm)
    90A
  • Current - Collector (Ic) (Max)
    69A

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