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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > APT31M100B2
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6904439APT31M100B2 ImageMicrosemi

APT31M100B2

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Specifications
  • Part Number
    APT31M100B2
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1000V 32A T-MAX
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.APT31M100B2.pdf
    2.APT31M100B2.pdf
  • Vgs(th) (Max) @ Id
    5V @ 2.5mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    T-MAX™ [B2]
  • Series
    POWER MOS 8™
  • Rds On (Max) @ Id, Vgs
    380 mOhm @ 16A, 10V
  • Power Dissipation (Max)
    1040W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3 Variant
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    8500pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    260nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    1000V
  • Detailed Description
    N-Channel 1000V 32A (Tc) 1040W (Tc) Through Hole T-MAX™ [B2]
  • Current - Continuous Drain (Id) @ 25°C
    32A (Tc)

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