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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > APT50GR120JD30
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4943167APT50GR120JD30 ImageMicrosemi

APT50GR120JD30

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Specifications
  • Part Number
    APT50GR120JD30
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1200V 84A 417W SOT227
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    APT50GR120JD30.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    3.2V @ 15V, 50A
  • Supplier Device Package
    SOT-227
  • Series
    -
  • Power - Max
    417W
  • Package / Case
    SOT-227-4
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • NTC Thermistor
    No
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Cies) @ Vce
    5.55nF @ 25V
  • Input
    Standard
  • IGBT Type
    NPT
  • Detailed Description
    IGBT Module NPT Single 1200V 84A 417W Chassis Mount SOT-227
  • Current - Collector Cutoff (Max)
    1.1mA
  • Current - Collector (Ic) (Max)
    84A
  • Configuration
    Single

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