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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > APT50GN120B2G
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3221309APT50GN120B2G ImageMicrosemi

APT50GN120B2G

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Reference Price(In US Dollars)

In stock
1+
$11.85
10+
$10.774
30+
$9.966
120+
$9.158
270+
$8.35
510+
$7.811
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Specifications
  • Part Number
    APT50GN120B2G
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1200V 134A 543W TO-247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.APT50GN120B2G.pdf
    2.APT50GN120B2G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 50A
  • Test Condition
    800V, 50A, 2.2 Ohm, 15V
  • Td (on/off) @ 25°C
    28ns/320ns
  • Switching Energy
    4495µJ (off)
  • Series
    -
  • Power - Max
    543W
  • Packaging
    Tube
  • Package / Case
    TO-247-3 Variant
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    18 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    NPT, Trench Field Stop
  • Gate Charge
    315nC
  • Detailed Description
    IGBT NPT, Trench Field Stop 1200V 134A 543W Through Hole
  • Current - Collector Pulsed (Icm)
    150A
  • Current - Collector (Ic) (Max)
    134A

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