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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > APTM100U13SG
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APTM100U13SG

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Specifications
  • Part Number
    APTM100U13SG
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1000V 65A J3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    APTM100U13SG.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 10mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    Module
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    145 mOhm @ 32.5A, 10V
  • Power Dissipation (Max)
    1250W (Tc)
  • Packaging
    Bulk
  • Package / Case
    J3 Module
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    31600pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    2000nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    1000V
  • Detailed Description
    N-Channel 1000V 65A (Tc) 1250W (Tc) Chassis Mount Module
  • Current - Continuous Drain (Id) @ 25°C
    65A (Tc)

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