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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > APTM100VDA35T3G
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APTM100VDA35T3G

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Specifications
  • Part Number
    APTM100VDA35T3G
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 1000V 22A SP3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • ECAD Model
  • Vgs(th) (Max) @ Id
    5V @ 2.5mA
  • Supplier Device Package
    SP3
  • Series
    POWER MOS 7®
  • Rds On (Max) @ Id, Vgs
    420 mOhm @ 11A, 10V
  • Power - Max
    390W
  • Packaging
    Bulk
  • Package / Case
    SP3
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    5200pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    186nC @ 10V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    1000V (1kV)
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 1000V (1kV) 22A 390W Chassis Mount SP3
  • Current - Continuous Drain (Id) @ 25°C
    22A

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