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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > JAN1N5807US
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2070823

JAN1N5807US

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Reference Price(In US Dollars)

In stock
100+
$10.528
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Specifications
  • Part Number
    JAN1N5807US
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    DIODE GEN PURP 50V 6A B-MELF
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JAN1N5807US.pdf
  • Voltage - Forward (Vf) (Max) @ If
    875mV @ 4A
  • Voltage - DC Reverse (Vr) (Max)
    50V
  • Supplier Device Package
    B, SQ-MELF
  • Speed
    Fast Recovery = 200mA (Io)
  • Series
    Military, MIL-PRF-19500/477
  • Reverse Recovery Time (trr)
    30ns
  • Packaging
    Bulk
  • Package / Case
    SQ-MELF, B
  • Other Names
    JAN1N5807US-MIL
  • Operating Temperature - Junction
    -65°C ~ 175°C
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    8 Weeks
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Diode Type
    Standard
  • Detailed Description
    Diode Standard 50V 6A Surface Mount B, SQ-MELF
  • Current - Reverse Leakage @ Vr
    5µA @ 50V
  • Current - Average Rectified (Io)
    6A
  • Capacitance @ Vr, F
    60pF @ 10V, 1MHz

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