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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N3019
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1375263JAN2N3019 ImageMicrosemi

JAN2N3019

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Reference Price(In US Dollars)

In stock
1+
$26.34
10+
$24.36
25+
$22.385
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Specifications
  • Part Number
    JAN2N3019
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 80V 1A TO39
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JAN2N3019.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-39
  • Series
    Military, MIL-PRF-19500/391
  • Power - Max
    800mW
  • Packaging
    Bulk
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Other Names
    1086-2340
    1086-2340-MIL
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    23 Weeks
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-39
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 500mA, 10V
  • Current - Collector Cutoff (Max)
    10µA (ICBO)
  • Current - Collector (Ic) (Max)
    1A

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