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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JANTXV2N3501L
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4649357JANTXV2N3501L ImageMicrosemi

JANTXV2N3501L

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Specifications
  • Part Number
    JANTXV2N3501L
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 150V 0.3A
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JANTXV2N3501L.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    150V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 15mA, 150mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-5
  • Series
    Military, MIL-PRF-19500/366
  • Power - Max
    1W
  • Packaging
    Bulk
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Other Names
    1086-3078
    1086-3078-MIL
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 150V 300mA 1W Through Hole TO-5
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA, 10V
  • Current - Collector Cutoff (Max)
    10µA (ICBO)
  • Current - Collector (Ic) (Max)
    300mA

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