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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JANTXV2N6301
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26111JANTXV2N6301 ImageMicrosemi

JANTXV2N6301

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Specifications
  • Part Number
    JANTXV2N6301
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP DARL 80V 8A TO-66
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JANTXV2N6301.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 80mA, 8A
  • Transistor Type
    PNP - Darlington
  • Supplier Device Package
    TO-66
  • Series
    Military, MIL-PRF-19500/539
  • Power - Max
    75W
  • Packaging
    Bulk
  • Package / Case
    TO-213AA, TO-66-2
  • Other Names
    1086-15609
    1086-15609-MIL
  • Operating Temperature
    -55°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP - Darlington 80V 8A 75W Through Hole TO-66
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 4A, 3V
  • Current - Collector Cutoff (Max)
    500µA
  • Current - Collector (Ic) (Max)
    8A

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