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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > MS2200
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MS2200

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Specifications
  • Part Number
    MS2200
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS RF BIPO 1167W 43.2A MS102
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MS2200.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    65V
  • Transistor Type
    NPN
  • Supplier Device Package
    M102
  • Series
    -
  • Power - Max
    1167W
  • Packaging
    Bulk
  • Package / Case
    M102
  • Operating Temperature
    200°C (TJ)
  • Noise Figure (dB Typ @ f)
    -
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    9.7dB
  • Frequency - Transition
    400MHz ~ 500MHz
  • Detailed Description
    RF Transistor NPN 65V 43.2A 400MHz ~ 500MHz 1167W Chassis Mount M102
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 5A, 5V
  • Current - Collector (Ic) (Max)
    43.2A

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