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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > SG2013J-883B
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2964470SG2013J-883B ImageMicrosemi

SG2013J-883B

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Reference Price(In US Dollars)

In stock
1+
$75.90
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Specifications
  • Part Number
    SG2013J-883B
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 7NPN DARL 50V 0.6A 16JDIP
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    SG2013J-883B.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    1.9V @ 600µA, 500mA
  • Transistor Type
    7 NPN Darlington
  • Supplier Device Package
    16-CDIP
  • Series
    -
  • Power - Max
    -
  • Packaging
    Tube
  • Package / Case
    -
  • Other Names
    1259-1108
    1259-1108-MIL
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 600mA Through Hole 16-CDIP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    900 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    600mA

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