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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > SG2003J-JAN
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51664SG2003J-JAN ImageMicrosemi

SG2003J-JAN

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Specifications
  • Part Number
    SG2003J-JAN
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 7NPN DARL 50V 0.5A 16DIP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SG2003J-JAN.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 500µA, 350mA
  • Transistor Type
    7 NPN Darlington
  • Supplier Device Package
    16-CDIP
  • Series
    -
  • Power - Max
    -
  • Packaging
    Tube
  • Package / Case
    16-CDIP (0.300", 7.62mm)
  • Other Names
    1259-1082
    1259-1082-MIL
    M38510/14103BEA
    Q9387418
    SG2003JJAN
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-CDIP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 350mA, 2V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    500mA

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