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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > SG2803J-DESC
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6854734SG2803J-DESC ImageMicrosemi

SG2803J-DESC

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Specifications
  • Part Number
    SG2803J-DESC
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 8NPN DARL 50V 0.5A 18DIP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SG2803J-DESC.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 500µA, 350mA
  • Transistor Type
    8 NPN Darlington
  • Supplier Device Package
    18-CDIP
  • Series
    -
  • Power - Max
    -
  • Packaging
    Tube
  • Package / Case
    -
  • Other Names
    1259-1085
    1259-1085-MIL
    5962-8605801VA
    Q10830625
    SG2803JDESC
  • Operating Temperature
    -55°C ~ 125°C (TA)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA Through Hole 18-CDIP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 350mA, 2V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    500mA

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